
NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter breakdown voltage and a continuous collector current of 100mA. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 250MHz. Packaged in SC-59, this 3-pin silicon transistor operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 200mW. RoHS compliant and lead-free.
Rohm DTC123JKAT146 technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Height | 1.1mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Rohm DTC123JKAT146 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
