NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a 100mA continuous collector current. Offers a minimum DC current gain (hFE) of 33 and a transition frequency of 250MHz. Packaged in SC for surface mount applications, operating from -55°C to 150°C with 200mW power dissipation. RoHS compliant and lead-free.
PackageSC
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm DTC123YUAT106 technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| hFE Min | 33 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm DTC123YUAT106 Datasheet
Download the complete datasheet for Rohm DTC123YUAT106 to view detailed technical specifications.
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