NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and 30mA maximum collector current. Operates with a 50V supply and offers a minimum hFE of 56. Packaged in a SOT-416 surface-mount case, this component is RoHS compliant and rated for a maximum power dissipation of 150mW. Transition frequency reaches 250MHz.
PackageSOT-416
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm DTC124EETL technical specifications.
General
Package/Case
SOT-416
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
30mA
Current Rating
100mA
hFE Min
56
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
30mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
100mA
Max Power Dissipation
150mW
Mount
Surface Mount
Operating Supply Voltage
50V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
250MHz
DC Rated Voltage
50V
Compliance
RoHS
Compliant
Datasheet
Rohm DTC124EETL Datasheet
Download the complete datasheet for Rohm DTC124EETL to view detailed technical specifications.
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