
NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and 30mA maximum collector current. Operates with a 50V supply and offers a minimum hFE of 56. Packaged in a SOT-416 surface-mount case, this component is RoHS compliant and rated for a maximum power dissipation of 150mW. Transition frequency reaches 250MHz.
Rohm DTC124EETL technical specifications.
| Package/Case | SOT-416 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 30mA |
| Current Rating | 100mA |
| hFE Min | 56 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
Download the complete datasheet for Rohm DTC124EETL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
