NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a maximum continuous collector current of 100mA. Operates with an emitter-base voltage (VEBO) of 5V and offers a minimum DC current gain (hFE) of 100. This surface mount component is packaged in SOT-416 (EMT3) with 3 pins and a transition frequency of 250MHz. Rated for operation between -55°C and 150°C with a maximum power dissipation of 150mW. RoHS compliant and supplied on tape and reel.
PackageSOT-416
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm DTC143TETL technical specifications.
General
Package/Case
SOT-416
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
150mV
Continuous Collector Current
100mA
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
250MHz
DC Rated Voltage
50V
Compliance
RoHS
Compliant
Datasheet
Rohm DTC143TETL Datasheet
Download the complete datasheet for Rohm DTC143TETL to view detailed technical specifications.
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