
NPN silicon bipolar junction transistor for small signal applications. Features a 15V collector-emitter breakdown voltage and a 600mA continuous collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Designed for surface mounting in a TO-236-3 package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 200mW.
Rohm DTC343TKT146 technical specifications.
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 15V |
| Collector-emitter Voltage-Max | 80mV |
| Continuous Collector Current | 600mA |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 600mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 15V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 15V |
| RoHS | Compliant |
Download the complete datasheet for Rohm DTC343TKT146 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
