
NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a 500mA continuous collector current. This surface-mount device offers a minimum hFE of 39 and a transition frequency of 200MHz. Packaged in a 3-pin SMT3 (SC-59) package, it operates from -55°C to 150°C with a maximum power dissipation of 200mW.
Rohm DTD123EKT146 technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Height | 1.1mm |
| hFE Min | 39 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 500mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 50V |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Rohm DTD123EKT146 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
