
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 500mA. Offers a minimum DC current gain (hFE) of 47 and a transition frequency of 200MHz. This surface mount device (SMD/SMT) is packaged in SMT3 (SC-59) with 3 pins and is RoHS compliant. Maximum power dissipation is 200mW, with an operating temperature range of -55°C to 150°C.
Rohm DTD143EKT146 technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| hFE Min | 47 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 500mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
Download the complete datasheet for Rohm DTD143EKT146 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
