NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 1A continuous collector current and 60V collector-emitter breakdown voltage. This silicon transistor offers a minimum hFE of 300 and a transition frequency of 80MHz. Packaged in a TO-243AA (MPT3, SC-62) surface mount configuration, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-243AA
Current Rating1A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm DTDG14GPT100 technical specifications.
General
| Package/Case | TO-243AA |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 1A |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Operating Supply Voltage | 60V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 80MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm DTDG14GPT100 Datasheet
Download the complete datasheet for Rohm DTDG14GPT100 to view detailed technical specifications.
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