P-channel Silicon MOSFET, 20V Drain-Source Voltage, 0.2A Continuous Drain Current. Features dual enhancement mode elements in a 6-pin EMT SOT package with flat leads for surface mounting. Maximum Drain-Source On-Resistance is 1200mOhm at 4.5V, with a typical gate charge of 1.4nC and input capacitance of 115pF. Operating temperature range from -55°C to 150°C.
PackageEMT
MountingSurface Mount
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Technical Specifications
Rohm EM6J1T2R technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | EMT |
| Lead Shape | Flat |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.7(Max) |
| Package Width (mm) | 1.3(Max) |
| Package Height (mm) | 0.45(Max) |
| Seated Plane Height (mm) | 0.55(Max) |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 0.2A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 115@10VpF |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S5518 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Rohm EM6J1T2R Datasheet
Download the complete datasheet for Rohm EM6J1T2R to view detailed technical specifications.
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