The EMB2T2R is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. The transistor is packaged in a small outline R-PDSO-F6 package and is suitable for surface mount applications. The EMB2T2R is lead-free and RoHS compliant.
Current Rating-30mA
MountingSurface Mount
PolarityPNP
Power150mW
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Technical Specifications
Rohm EMB2T2R technical specifications.
General
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -30mA |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm EMB2T2R Datasheet
Download the complete datasheet for Rohm EMB2T2R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.