Dual NPN/PNP bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a 30mA continuous collector current. Operates with a maximum power dissipation of 150mW and a transition frequency of 250MHz. Packaged in an EMT6 surface-mount package, this silicon transistor is RoHS compliant.
Current Rating30mA
MountingSurface Mount
PolarityPNP, NPN
Power150mW
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Technical Specifications
Rohm EMD12T2R technical specifications.
General
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 30mA |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | PNP, NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm EMD12T2R Datasheet
Download the complete datasheet for Rohm EMD12T2R to view detailed technical specifications.
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