The EMF8T2R is a surface mount NPN bipolar junction transistor from Rohm with a collector-emitter breakdown voltage of 12V and a maximum collector current of 500mA. It has a minimum current gain of 270 and a maximum power dissipation of 150mW. The transistor operates over a temperature range of -55°C to 150°C and is available in a small outline package. The EMF8T2R is RoHS compliant and suitable for use in a variety of electronic applications.
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm EMF8T2R technical specifications.
General
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 300mV |
| hFE Min | 270 |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 320MHz |
Compliance
| RoHS | Compliant |
Datasheet
Rohm EMF8T2R Datasheet
Download the complete datasheet for Rohm EMF8T2R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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