NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a maximum continuous collector current of 100mA. Offers a minimum hFE of 68 and a transition frequency of 250MHz. This surface mount device operates from -55°C to 150°C with a maximum power dissipation of 150mW. Packaged in tape and reel, it is RoHS compliant.
Current Rating30mA
MountingSurface Mount
PolarityNPN, PNP
Power150mW
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Technical Specifications
Rohm EMH6T2R technical specifications.
General
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
100mA
Current Rating
30mA
hFE Min
68
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
100mA
Max Power Dissipation
150mW
Mount
Surface Mount
Operating Supply Voltage
50V
Package Quantity
8000
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
50V
Compliance
RoHS
Compliant
Datasheet
Rohm EMH6T2R Datasheet
Download the complete datasheet for Rohm EMH6T2R to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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