PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a continuous collector current of -150mA. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 140MHz. Packaged in a 6-pin EMT6 surface-mount configuration, supplied on tape and reel. Operates across a wide temperature range from -55°C to 150°C.
Current Rating-150mA
MountingSurface Mount
PolarityPNP
Power150mW
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Technical Specifications
Rohm EMT1T2R technical specifications.
General
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -150mA |
| Current Rating | -150mA |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 140MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm EMT1T2R Datasheet
Download the complete datasheet for Rohm EMT1T2R to view detailed technical specifications.
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