NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 12V Collector-Emitter Breakdown Voltage (VCEO) and a 500mA maximum collector current. Operates with a 320MHz transition frequency and a minimum hFE of 270. This surface mount device, housed in an EMT6 package, offers a wide operating temperature range from -55°C to 150°C.
Frequency320MHz
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm EMX18T2R technical specifications.
General
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 320MHz |
| Gain Bandwidth Product | 320MHz |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 320MHz |
| DC Rated Voltage | 12V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm EMX18T2R Datasheet
Download the complete datasheet for Rohm EMX18T2R to view detailed technical specifications.
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