Dual NPN/PNP silicon bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and 150mA continuous collector current. Operates with a 50V supply voltage and offers a gain bandwidth product of 180MHz. Packaged in an EMT6 surface-mount package, this RoHS compliant component is suitable for a wide temperature range from -55°C to 150°C.
Frequency180MHz
Current Rating150mA
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Rohm EMZ1T2R technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | -150mA |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 150mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Operating Supply Voltage | 50V |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm EMZ1T2R Datasheet
Download the complete datasheet for Rohm EMZ1T2R to view detailed technical specifications.
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