
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 250MHz. Packaged in a compact SC-74A (5-pin) surface-mount device (SMD/SMT) with dimensions of 3mm (L) x 1.8mm (W) x 1.2mm (H). Operates across a temperature range of -55°C to 150°C and is RoHS compliant and lead-free.
Rohm FMA5AT148 technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 1.2mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -50V |
| Width | 1.8mm |
| RoHS | Compliant |
Download the complete datasheet for Rohm FMA5AT148 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
