The IMB7AT108 is a PNP transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a high current gain of 100 and a maximum power dissipation of 300mW. The transistor is packaged in a surface-mount SOT-457 package and is suitable for operation over a temperature range of -55°C to 150°C. The IMB7AT108 is RoHS compliant and available in quantities of 3000 per reel.
PackageSOT-457
MountingSurface Mount
PolarityPNP
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Technical Specifications
Rohm IMB7AT108 technical specifications.
General
| Package/Case | SOT-457 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| hFE Min | 100 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Rohm IMB7AT108 Datasheet
Download the complete datasheet for Rohm IMB7AT108 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.