
Dual NPN/PNP bipolar junction transistor for surface mount applications. Features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 30mA, with a peak capability of 100mA. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 300mW. This RoHS compliant component is supplied in a 6-pin SMT6 package, measuring 3mm x 1.8mm x 1.2mm, and is delivered on tape and reel.
Rohm IMD2AT108 technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 30mA |
| Current Rating | 30mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.2mm |
| hFE Min | 56 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Width | 1.8mm |
| RoHS | Compliant |
Download the complete datasheet for Rohm IMD2AT108 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
