Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity in a 6-pin SC-74 package. This silicon transistor offers a 50V collector-emitter breakdown voltage and a 100mA continuous collector current. Key specifications include a 250MHz transition frequency, 300mW power dissipation, and a minimum hFE of 68. Operating temperature range is -55°C to 150°C, with RoHS compliance.
PackageSMD/SMT
Current Rating100mA
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Rohm IMD9AT108 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.2mm |
| hFE Min | 68 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Width | 1.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Rohm IMD9AT108 Datasheet
Download the complete datasheet for Rohm IMD9AT108 to view detailed technical specifications.
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