NPN bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and 150mA continuous collector current (IC). This 2-element silicon transistor operates with a gain bandwidth product (fT) of 180MHz and a minimum hFE of 120. Packaged in a compact 6-pin SMT6 (SC-74) surface-mount case, it offers a wide operating temperature range from -55°C to 150°C and is RoHS compliant.
Frequency180MHz
PackageSMD/SMT
Current Rating150mA
MountingSurface Mount
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Technical Specifications
Rohm IMX1T110 technical specifications.
General
Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
400mV
Continuous Collector Current
150mA
Current Rating
150mA
Emitter Base Voltage (VEBO)
7V
Gain Bandwidth Product
180MHz
Height
1.1mm
hFE Min
120
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
50V
Max Collector Current
150mA
Max Frequency
180MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
150mA
Max Output Voltage
50V
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Channels
2
Output Voltage
50V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
180MHz
DC Rated Voltage
50V
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Rohm IMX1T110 Datasheet
Download the complete datasheet for Rohm IMX1T110 to view detailed technical specifications.
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