Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity. This silicon transistor offers a 50V collector-emitter breakdown voltage and a 150mA continuous collector current. Key specifications include a 120 minimum hFE, 180MHz gain bandwidth product, and 140MHz transition frequency. Designed for surface mounting in an SMT6, SC-74, 6-pin package, it operates from -55°C to 150°C and is RoHS compliant.
PackageSMD/SMT
Current Rating150mA
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Rohm IMZ2AT108 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | 150mA |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 150mA |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
Compliance
| RoHS | Compliant |
Datasheet
Rohm IMZ2AT108 Datasheet
Download the complete datasheet for Rohm IMZ2AT108 to view detailed technical specifications.
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