N-Channel Silicon Metal-Oxide Semiconductor FET, TSMT5, 5 PIN, surface mount power field-effect transistor. Features 30V Drain to Source Breakdown Voltage, 2A Continuous Drain Current, and 100mΩ Max Drain-source On Resistance. Operates with a nominal Gate to Source Voltage of 1.5V, offering 8ns Turn-On Delay and 10ns Fall Time. Maximum power dissipation is 1.25W with an operating temperature range of -55°C to 150°C.
PackageSOT-23-5
Current Rating2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Rohm QS5K2TR technical specifications.
General
| Package/Case | SOT-23-5 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 100MR |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.85mm |
| Input Capacitance | 175pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 30V |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Rohm QS5K2TR Datasheet
Download the complete datasheet for Rohm QS5K2TR to view detailed technical specifications.
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