N-Channel Silicon JFET, TSMT5 package, 5-pin. Features 30V Drain-to-Source Breakdown Voltage (Vdss) and 2A Continuous Drain Current (ID). Offers low Drain-to-Source On-Resistance (Rds On) of 100mΩ. Operates with a Gate-to-Source Voltage (Vgs) up to 12V. Maximum power dissipation is 900mW. This surface mount component is RoHS compliant and lead-free.
PackageSOT-23-5
Current Rating2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Rohm QS5U12TR technical specifications.
General
| Package/Case | SOT-23-5 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 175pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 900mW |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm QS5U12TR Datasheet
Download the complete datasheet for Rohm QS5U12TR to view detailed technical specifications.
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