N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a 30V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 2A. Offers a low Drain to Source Resistance (Rds On) of 100mR. Operates within a temperature range of -40°C to 150°C with a maximum power dissipation of 1.25W. Packaged in a TSMT5 (SOT-23-5) surface-mount package, supplied on tape and reel.
PackageSOT-23-5
Current Rating2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Rohm QS5U16TR technical specifications.
General
Package/Case
SOT-23-5
Continuous Drain Current (ID)
2A
Current Rating
2A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
175pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
900mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.25W
Radiation Hardening
No
Rds On Max
100mR
RoHS Compliant
Yes
Threshold Voltage
1.5V
Turn-Off Delay Time
21ns
Turn-On Delay Time
8ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Rohm QS5U16TR Datasheet
Download the complete datasheet for Rohm QS5U16TR to view detailed technical specifications.
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