P-channel, silicon, metal-oxide semiconductor field-effect transistor (MOSFET) designed for small signal applications. Features a continuous drain current of 2A and a drain-to-source breakdown voltage of -20V. Offers a low on-resistance of 125mR and a maximum power dissipation of 1.25W. Packaged in a compact SOT-23-5 surface-mount case, this device operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 16ns.
PackageSOT-23-5
Current Rating-2A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Rohm QS5U28TR technical specifications.
General
Package/Case
SOT-23-5
Continuous Drain Current (ID)
2A
Current Rating
-2A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
20V
Fall Time
16ns
Gate to Source Voltage (Vgs)
12V
Height
0.85mm
Input Capacitance
450pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.25W
Radiation Hardening
No
Rds On Max
125mR
RoHS Compliant
Yes
Turn-Off Delay Time
32ns
Turn-On Delay Time
10ns
DC Rated Voltage
-20V
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Rohm QS5U28TR Datasheet
Download the complete datasheet for Rohm QS5U28TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.