P-channel silicon JFET for small signal applications. Features 30V drain-source breakdown voltage (Vdss) and 2A continuous drain current (ID). Offers low 135mΩ drain-source on-resistance (Rds On Max) and 1.25W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a 5-pin TSMT5 (SOT-23-5) surface-mount package, supplied on tape and reel.
Rohm QS5U33TR technical specifications.
| Package/Case | SOT-23-5 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 135mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | -30V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 310pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Nominal Vgs | -2.5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 135mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 7ns |
| RoHS | Compliant |
Download the complete datasheet for Rohm QS5U33TR to view detailed technical specifications.
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