P-channel silicon JFET for small signal applications. Features 30V drain-source breakdown voltage (Vdss) and 2A continuous drain current (ID). Offers low 135mΩ drain-source on-resistance (Rds On Max) and 1.25W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a 5-pin TSMT5 (SOT-23-5) surface-mount package, supplied on tape and reel.
PackageSOT-23-5
MountingSurface Mount
PolarityP-CHANNEL
Power1.25W
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Technical Specifications
Rohm QS5U33TR technical specifications.
General
Package/Case
SOT-23-5
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
135mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
-30V
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
310pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Surface Mount
Nominal Vgs
-2.5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.25W
Radiation Hardening
No
Rds On Max
135mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
25ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Rohm QS5U33TR Datasheet
Download the complete datasheet for Rohm QS5U33TR to view detailed technical specifications.
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