P-channel silicon JFET for small signal applications. Features 30V drain-source breakdown voltage (Vdss) and 2A continuous drain current (ID). Offers low 135mΩ drain-source on-resistance (Rds On Max) and 1.25W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a 5-pin TSMT5 (SOT-23-5) surface-mount package, supplied on tape and reel.
Rohm QS5U33TR technical specifications.
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