Rohm
QS5U36TR
Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT5, 5 PIN
PackageSOT-23-5
MountingSurface Mount
PolarityN-CHANNEL
Power900mW
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Technical Specifications
Rohm QS5U36TR technical specifications.
General
Package/Case
SOT-23-5
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
81mR
Drain to Source Voltage (Vdss)
20V
Fall Time
15ns
Gate to Source Voltage (Vgs)
10V
Input Capacitance
280pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
900mW
Radiation Hardening
No
Rds On Max
81mR
RoHS Compliant
Yes
Turn-Off Delay Time
30ns
Turn-On Delay Time
6ns
Compliance
RoHS
Compliant
Datasheet
Rohm QS5U36TR Datasheet
Download the complete datasheet for Rohm QS5U36TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.