P-channel JFET for small signal applications, featuring a 1.5A continuous drain current and 20V drain-source breakdown voltage. This surface-mount device offers a low 215mΩ drain-source on-resistance and 1.25W power dissipation. Key specifications include a 12V gate-source voltage, 270pF input capacitance, and fast switching times with a 10ns turn-on delay and 45ns turn-off delay. Packaged in a TSMT6 (SOT-23-6) for tape and reel distribution, this RoHS compliant component operates up to 150°C.
Rohm QS6J3TR technical specifications.
Download the complete datasheet for Rohm QS6J3TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.