N-channel enhancement mode power MOSFET featuring a 45V drain-source voltage and 1A continuous drain current. This dual-configuration transistor is housed in a compact 6-pin TSMT lead-frame SMT package with dimensions of 3mm x 1.8mm x 0.95mm. Key electrical characteristics include a maximum drain-source resistance of 420 mOhm at 4.5V and a typical gate charge of 1.5 nC at 4.5V. Operating across a temperature range of -55°C to 150°C, this surface-mount component offers a maximum power dissipation of 1250 mW.
PackageTSMT
MountingSurface Mount
Quick Jump:
Technical Specifications
Rohm QS6K21 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
TSMT
Pin Count
6
PCB
6
Package Length (mm)
3(Max)
Package Width (mm)
1.8(Max)
Package Height (mm)
0.95(Max)
Seated Plane Height (mm)
1(Max)
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
45V
Maximum Gate Source Voltage
12V
Maximum Continuous Drain Current
1A
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
95@10VpF
Maximum Power Dissipation
1250mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S5518
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Rohm QS6K21 Datasheet
Download the complete datasheet for Rohm QS6K21 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.