N-Channel and P-Channel Silicon Junction Field-Effect Transistor (JFET) for small signal applications. Features a 1.5A continuous drain current (ID) and 30V dual supply voltage. Offers a low drain-source on-resistance (Rds On) of 230mR and a drain-source breakdown voltage of 20V. Packaged in a TSMT6 (SOT-23-6) surface-mount package, this RoHS compliant component operates from -55°C to 150°C.
PackageSOT-23-6
Current Rating1.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Rohm QS6M3TR technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 1.5A |
| Current Rating | 1.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 360MR |
| Dual Supply Voltage | 30V |
| Fall Time | 12ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 80pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 230mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Rohm QS6M3TR Datasheet
Download the complete datasheet for Rohm QS6M3TR to view detailed technical specifications.
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