N-Channel and P-Channel Silicon Metal-oxide Semiconductor FET, TSMT8, 8 PIN. Features 100V Drain to Source Voltage (Vdss) and 1.5A Continuous Drain Current (ID). Offers a low Rds On Max of 325mR and a Turn-On Delay Time of 10ns. Designed for surface mount applications with a max power dissipation of 1.5W. Operates across a wide temperature range from -55°C to 150°C.
PackageSMD/SMT
MountingSurface Mount
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Technical Specifications
Rohm QS8M51TR technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 290pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 325mR |
| RoHS Compliant | Yes |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Rohm QS8M51TR Datasheet
Download the complete datasheet for Rohm QS8M51TR to view detailed technical specifications.
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