Rohm
R8002ANJGTL
Power Field-Effect Transistor, 2A I(D), 800V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SC-83, TO-263S, D2PAK-3/2
Power Field-Effect Transistor, 2A I(D), 800V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SC-83, TO-263S, D2PAK-3/2
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Technical Specifications
Rohm R8002ANJGTL technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Rohm R8002ANJGTL Datasheet
Download the complete datasheet for Rohm R8002ANJGTL to view detailed technical specifications.
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