R8002ANX

Power Field-Effect Transistor, 2A I(D), 800V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN

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Rohm R8002ANX technical specifications.

Max Operating Temperature

150

Number of Terminals

Terminal Position

SINGLE

JEDEC Package Code

TO-220AB

Number of Elements

RoHS

Yes

REACH

Compliant

Military Spec

False

This datasheet cannot be embedded due to technical restrictions.