N-channel silicon Metal-oxide Semiconductor FET, a single-element junction field-effect transistor designed for surface mounting. Features a continuous drain current of 3A, a drain-to-source breakdown voltage of 30V, and a maximum drain-source on-resistance of 120mΩ. This component offers a maximum power dissipation of 2W and operates up to 150°C. Packaged in TO-243AA, it is lead-free and RoHS compliant.
PackageTO-243AA
Current Rating3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Rohm RHP030N03T100 technical specifications.
General
| Package/Case | TO-243AA |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 120MR |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 160pF |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 30V |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Rohm RHP030N03T100 Datasheet
Download the complete datasheet for Rohm RHP030N03T100 to view detailed technical specifications.
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