N-channel silicon Metal-oxide Semiconductor FET (MOSFET) designed for small signal applications. Features a 30V breakdown voltage and a continuous drain current (I(D)) of 0.3A. This single-element JFET is housed in a compact UMT3 package with 3 terminals, offering dual terminal positions. Maximum operating temperature reaches 150°C.
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Technical Specifications
Rohm RJU003N03T106 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
DUAL
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
REACH
Compliant
Military Spec
False
Datasheet
Rohm RJU003N03T106 Datasheet
Download the complete datasheet for Rohm RJU003N03T106 to view detailed technical specifications.
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