N-Channel Power MOSFET featuring 30V drain-source voltage and 10A continuous drain current. This single-element silicon Metal-oxide Semiconductor FET boasts a low on-resistance of 0.0153 ohms. Designed with 5 terminals in a DUAL configuration, it is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Rohm RQ3E100BNTB technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Rohm RQ3E100BNTB Datasheet
Download the complete datasheet for Rohm RQ3E100BNTB to view detailed technical specifications.
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