N-channel enhancement mode power MOSFET featuring a 40V drain-source voltage and 13A continuous drain current. This 8-pin HSMT package offers surface mount capability with a compact footprint, measuring 3.3mm x 3.1mm x 0.85mm. It boasts a low drain-source on-resistance of 6.1mOhm at 10V and a typical gate charge of 21.3nC. Operating across a wide temperature range from -55°C to 150°C, this single MOSFET is designed for efficient power switching applications.
PackageHSMT
MountingSurface Mount
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Technical Specifications
Rohm RQ3G130MNTB technical specifications.
General
| Package Family Name | HSMT |
| Package/Case | HSMT |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.3(Max) |
| Package Width (mm) | 3.1(Max) |
| Package Height (mm) | 0.85(Max) |
| Seated Plane Height (mm) | 0.9(Max) |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 13A |
| Maximum Drain Source Resistance | 6.1@10VmOhm |
| Typical Gate Charge @ Vgs | 21.3@10VnC |
| Typical Gate Charge @ 10V | 21.3nC |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S5518 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Rohm RQ3G130MNTB Datasheet
Download the complete datasheet for Rohm RQ3G130MNTB to view detailed technical specifications.
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