P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 4A continuous drain current. This single-element transistor is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum drain-source on-resistance of 75mΩ at 10V, a maximum power dissipation of 2000mW, and a typical input capacitance of 480pF at 10V. The plastic package measures 5mm x 4.4mm x 1.5mm, operating within a temperature range of -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Rohm RRH040P03 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
4.4
Package Height (mm)
1.5
Seated Plane Height (mm)
1.61
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
4A
Maximum Gate Threshold Voltage
2.5V
Maximum Drain Source Resistance
75@10VmOhm
Typical Gate Charge @ Vgs
9.6@10V|5.2@5VnC
Typical Gate Charge @ 10V
9.6nC
Typical Input Capacitance @ Vds
480@10VpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S5518
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Rohm RRH040P03 Datasheet
Download the complete datasheet for Rohm RRH040P03 to view detailed technical specifications.
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