RS1L151ATTB1

N-channel enhancement mode power MOSFET designed for high-efficiency switching applications. Features low on-resistance for minimal conduction losses and fast switching speeds for reduced switching losses. Capable of handling continuous drain currents up to 15A and pulsed drain currents up to 60A. Operates with a drain-source voltage of 150V and a gate-source voltage range of ±20V. Ideal for power supply units, motor control, and general-purpose power switching.