N-channel enhancement mode silicon power MOSFET in an 8-pin SOP package. Features a 30V drain-source voltage, 9A continuous drain current, and 16mOhm maximum drain-source resistance at 10V. Surface mountable with gull-wing leads, this single quad drain triple source transistor offers a maximum power dissipation of 2000mW and operates from -55°C to 150°C.
Rohm RSH090N03TB technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 3.9 |
| Seated Plane Height (mm) | 1.75 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 9A |
| Material | Si |
| Maximum Drain Source Resistance | 16@10VmOhm |
| Typical Gate Charge @ Vgs | 11@5VnC |
| Typical Input Capacitance @ Vds | 810@10VpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S5518 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Rohm RSH090N03TB to view detailed technical specifications.
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