RSR030N06TL

N-channel silicon Metal-oxide Semiconductor FET, a small signal field-effect transistor, features a 60V drain-to-source breakdown voltage and 3A continuous drain current. It offers a low drain-to-source resistance of 60mΩ and a maximum Rds On of 85mΩ. Operating across a temperature range of -55°C to 150°C, this 3-pin device in a TSMT3 package supports surface mount and through-hole mounting. Key switching characteristics include an 8ns turn-on delay and a 10ns fall time, with a maximum power dissipation of 1W.