Rohm
RTR025N05TL
Small Signal Field-Effect Transistor, 2.5A I(D), 45V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN
PackageTO-236-3
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
Rohm RTR025N05TL technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
45V
Drain to Source Resistance
95mR
Drain to Source Voltage (Vdss)
45V
Drain-source On Resistance-Max
130MR
Fall Time
14ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
250pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
130mR
RoHS Compliant
Yes
Turn-Off Delay Time
20ns
Turn-On Delay Time
9ns
Compliance
RoHS
Compliant
Datasheet
Rohm RTR025N05TL Datasheet
Download the complete datasheet for Rohm RTR025N05TL to view detailed technical specifications.
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