N-channel silicon Metal-oxide Semiconductor FET designed for surface mount applications. Features a continuous drain current of 3.5A and a drain-to-source breakdown voltage of 20V. Offers a low drain-to-source on-resistance of 31mR at a gate-to-source voltage of 10V. This RoHS compliant component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. Packaged in a compact TUMT6, 6-pin SMD/SMT format on tape and reel.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
Rohm RUL035N02TR technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.82mm |
| Input Capacitance | 460pF |
| Lead Free | Lead Free |
| Length | 2.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 43mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 10ns |
| Width | 1.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Rohm RUL035N02TR Datasheet
Download the complete datasheet for Rohm RUL035N02TR to view detailed technical specifications.
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