N-channel silicon JFET with a single element, designed for small signal applications. Features a drain current (I(D)) of 1A and a drain-source voltage (V(DS)) of 20V. This 3-terminal device has bottom terminal positioning and is constructed with a metal-oxide semiconductor field-effect transistor (MOSFET) architecture. The component is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Rohm RV2C010UNT2L technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Rohm RV2C010UNT2L Datasheet
Download the complete datasheet for Rohm RV2C010UNT2L to view detailed technical specifications.
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