N-channel silicon JFET with 3 terminals, featuring a dual terminal position and a single element. This Metal-oxide Semiconductor FET offers a drain current of 0.2A and a drain-source voltage rating of 50V. Designed for small signal applications, it utilizes a VMT3 package.
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Technical Specifications
Rohm RYM002N05T2CL technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Rohm RYM002N05T2CL Datasheet
Download the complete datasheet for Rohm RYM002N05T2CL to view detailed technical specifications.
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