Rohm
SCT2080KEC
Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
PackageTO-247
MountingThrough Hole
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Technical Specifications
Rohm SCT2080KEC technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
35A
Drain to Source Voltage (Vdss)
1.2kV
Drain-source On Resistance-Max
117mR
Fall Time
22ns
Gate to Source Voltage (Vgs)
22V
Height
5.03mm
Input Capacitance
2.08nF
Lead Free
Lead Free
Length
15.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
262W
Mount
Through Hole
Nominal Vgs
4V
Packaging
Rail/Tube
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
76ns
Turn-On Delay Time
35ns
Width
20.95mm
Compliance
RoHS
Compliant
Datasheet
Rohm SCT2080KEC Datasheet
Download the complete datasheet for Rohm SCT2080KEC to view detailed technical specifications.
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