N-channel Silicon Carbide MOSFET, 650V breakdown voltage, 39A continuous drain current, and 0.078 ohm on-resistance. This single-element, 3-terminal power field-effect transistor features a TO-247 package. It is a metal-oxide semiconductor FET designed for high-power applications.
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Technical Specifications
Rohm SCT3060ALGC11 technical specifications.
General
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-247
Number of Elements
1
Compliance
RoHS
Yes
Lead Free
Yes
REACH
not_compliant
Military Spec
False
Datasheet
Rohm SCT3060ALGC11 Datasheet
Download the complete datasheet for Rohm SCT3060ALGC11 to view detailed technical specifications.
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