N-Channel Silicon Carbide MOSFET, 650V breakdown voltage, 21A continuous drain current, and 0.156 ohm on-resistance. This single-element, 3-terminal power field-effect transistor is housed in a TO-247 package.
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Technical Specifications
Rohm SCT3120ALGC11 technical specifications.
General
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-247
Number of Elements
1
Compliance
RoHS
Yes
Lead Free
Yes
REACH
not_compliant
Military Spec
False
Datasheet
Rohm SCT3120ALGC11 Datasheet
Download the complete datasheet for Rohm SCT3120ALGC11 to view detailed technical specifications.
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