The SH8J65TB1 is a P-channel MOSFET from Rohm with a maximum operating temperature of 150°C and a maximum power dissipation of 2W. It features a continuous drain current of 7A and a drain to source breakdown voltage of -30V. The device has a drain to source resistance of 31mR and an input capacitance of 1.2nF. It is packaged in a small outline R-PDSO-G8 package and is available in tape and reel packaging.
PackageSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Rohm SH8J65TB1 technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 1.2nF |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 29mR |
Compliance
| RoHS | Compliant |
Datasheet
Rohm SH8J65TB1 Datasheet
Download the complete datasheet for Rohm SH8J65TB1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.